2025-01-31 Synopsys Sentaurus WorkBench (SWB) demo - Aditi Sood (BITS Pilani, Hyderabad Campus)

Summary

Key Points

• —Utilize the SDE to graphically design the MOSFET device by defining regions (channel, source, drain), materials (silicon, silicon dioxide, metal), dopings (p-type, n-type), and contacts (gate, source, drain). 6:46
• —Record all device design steps by enabling the "Journal On" feature in SDE, which generates a script of the actions performed. 9:41
• —Execute the modified SDE script within SWB to automatically build the device structure and generate the mesh, which can then be visualized in Centaurus Visual. 11:18
• —Clean the generated journal script to remove unnecessary commands and then modify it to use "@node" addressing, making it compatible for execution within the SWB environment. 12:06
• —Add the S-Device tool in SWB, input the simulation command file to apply biases and define measurement conditions, and include the necessary material parameter files. 14:42
• —Run the S-Device simulation, troubleshoot any errors by checking contact names and other parameters in the command file, and then view the device characteristics, such as ID vs. VGS curves, in Centaurus Visual. 17:20
• —Begin by setting up a new project in Centaurus Workbench (SWB) and adding the Centaurus Device Editor (SDE) and S-Device tools for device creation and simulation, respectively. 20:19
• —Learn to parameterize device dimensions, such as oxide thickness, by defining variables in the script and specifying their values or ranges within the SWB workspace. 23:30
• —Observe how parameterization allows for simulating and analyzing the device's behavior across different structural variations, providing insights into design optimization. 31:58
• —The overall process aims to equip users with the skills to design, simulate, and analyze semiconductor devices efficiently using the Centaurus suite. 32:40